Phase-change memory (Phase Change Memory-PCM) memory technology is not available (non-volatile) promises to be applied on the next generation of SSD drives. However, not only the hard drive that the PCM can be used as potential memory DRAM variable (volatile) to exploit the advantage of speed to retrieve its high pole. Stanford University demonstrated that the PCM can reach higher speed folding of thousands of times higher than conventional DRAM.Before coming to Stanford's research, we need to understand that the silicon memory chips typically have two forms: variable (volatile) memory as RAM on the computer with the characteristic data is lost when the power is out (shut down) and no variable (non-volatile) as other types of flash memory (the memory chips on your device or on the desktop SSD hard drive) can store data even when have shutdown.Variable memory access speeds higher than non-variable memory but not memory variable can store long data. This is also the reason why the flash memory technology is used for the storage device while it's active collaboration with the RAM CPU to store temporary data in the calculation process by its speed is measured in nano seconds (10 ^-9 seconds).PCM is a memory technology is not very unique variable, were built by the semiconductor material (such as chalcogenide glass) and was the main engineer of the Stanford University research from the 60s, 70s of the last century. PCM memory technology is also being more developed but the application primarily in hard drive technology, such as IBM, HGST and even Intel with memory Optane technology/3D Xpoint is also said to be developed based on the PCM.But researchers at Stanford have proven that the PCM can offer advantages over both types of memory, can store permanent data, the medium can bring faster access speed of thousand times the memory types today, not to mention saving power.Silicon memory chips usually operate under the mechanism turn on and off the stream of electrons signal corresponding to 1 and 0. Scientists are still looking for new materials and new processing procedures so that more saving and less area than silicon. PCM is one potential solution because it uses the proprietary materials atomic structure flexible. PCM has 2 status: non-crystalline (amorphous) with high impedance and the crystalline state (crystalline) with low impedance. In the crystalline state (or chaos), atomic structure, electron stream will block while in the crystalline state (or order), the atomic structure electrons moving through the line for will.Phase change material of being viewed as potential alternatives to the current silicon memory because it can maintain any State charges would adapt its structure. Once the materials Atomic Switch between the two to form the signal 1 or 0, then the material may store that data until a different energy source makes it change. The ability to store this data makes the modified memory phase variable could not be used as NAND flash memory on the phone or SSD hard drive.However, DRAM memory to use as a variable, of course, the capital in addition to the ability to store data, the PCM needs to have speed and consume less power. The inherent drawbacks of DRAM memory is memory space (memory gap or memory wall) so we can see that although the DRAM memory rhythms pulse has not stopped increasing during the past 30 years but the launching period of instruction and feedback (or latency latency) of memory still not improving much. And the downside will likely be overcome by PCM.The research group consists of 19 members led by Associate Professor of materials science and photon science Aaron Lindenberg led figured out how to convert quickly between 2 crystalline state and crystallization of the material corresponds to the switch from 0 to 1 and 1 back to 0 by applying electric or optical pulses.They put a sample of crystalline material in an electric field strength equivalent to a lightning. Based on a measurement, researchers have measured the atomic structure of the material changed from status crystallization (0) to crystallize (1) in less than 1 pico seconds (10 ^-12 seconds). This means the PCM can store data many times faster than RAM made of silicon for demanding tasks of memory and the microprocessor to operate at high speed. So can tell the PCM will eliminate the distance about the latency between CPU and RAM.However, there are still many obstacles on the way PCM technology applications into memory DRAM by probably the pulse energy yet to be created on the PCB circuits and signals are difficult to transmit through the copper on printed circuit board design. What we know at present is that the PCM can switch very fast status. Ability to operate at pico-second rate does not guarantee that this technology will replace the DRAM but it proves that the PCM has the potential to operate in the frequencies that DRAM can not
đang được dịch, vui lòng đợi..