The gate resistance is reduced by dividing the gate in several sections (each section with a width < 40um). N transistors can be instantiated in parallel if the instance name is INST_NAME
The gate resistance is reduced by dividing the gate in several sections(each section with a width < 40um). N transistors can be instantiated inparallel if the instance name is INST_NAME <1:N>
The gate resistance is reduced by Dividing the gate in vài sections (each section with a width <40um). N transistors can be instantiated in parallel if the instance name is INST_NAME <1: N>