Bias:The fixed voltage applied to a

Bias:
The fixed voltage applied to an electrode.
Built-in potential:
Also known as Vbi , it is the change in potential across the depletion region of a pn junction under equilibrium conditions.
Current:
A flow of electric charge. The amount of electric charge flowing past a specified circuit point per unit time.
Density:
The amount of something per unit measure.
Deplete:
To reduce or lessen in quantity, value, or effectiveness; exhaust. To empty.
Depletion region:
The transition region from p-type semiconductor to n-type semiconductor in a pn junction. This region is characterized by a large electric field, huge changes in hole and electron concentrations, large amounts of fixed charge (can't move), and a varying potential.
Depletion approximation:
An idealization of the actual charge distribution in the depletion region that originates from the fact that the majority carriers have been removed. We say this region is "depleted" of majority carriers. It facilitates the use of Poisson's equation because we can obtain a closed-form solution. When using depletion approximation, we are assuming that the carrier concentration (n and p) is negligible compared to the net doping concentration (NA and ND) in the region straddling the metallurgical junction, otherwise known as the depletion region. Outside this region, it is assumed that the net charge density is zero.

Kết quả (Anh) 2:

Bias:
The fixed voltage to an electrode áp.
Built-in potencial:
Also known as VBI, it is the change in the depletion region potencial across pn junction under equilibrium of a conditionsEND_SPAN.
Current:
A flow of electric charge. The amount of electric charge flowing past a point per unit time rõ circuit.
Density:
The amount of something per unit measure.
Deplete:
To Reduce or lessen in quantity, value, or effectiveness; exhaust. To empty.
Depletion region:
The transition from p-type semiconductor region of n-type semiconductor to a pn junction in. This region is Characterized by a large electric field, huge changes in the electron hole and concentrations, large tiền of fixed charge (can not move), and a varying potencial.
Depletion approximation:
An idealization of the actual charge distribution in the depletion region có originates from the fact rằng đã Majority unaligned carriers. We say this region is "depleted" of Majority carriers. It facilitates the use of Poisson's equation Because We can lấy a closed-form solution. When using depletion approximation, We Are assuming là carrier concentration (n and p) is negligible to the net doping concentration sánh (NA and ND) in the region straddling the metallurgical junction, otherwise known as the depletion region. Outside this region, it is giả sử là net charge density is zero.